Stimulated emission and time-resolved photoluminescence in rf-sputtered ZnO thin films

被引：118

作者：

Ozgür, U

Teke, A

Liu, C

Cho, SJ

Morkoç, H

Everitt, HO

机构：

[1] Virginia Commonwealth Univ, Dept Elect Engn, Richmond, VA 23284 USA

[2] Duke Univ, Dept Phys, Durham, NC 27708 USA

[3] Balikesir Univ, Fac Arts & Sci, Dept Phys, TR-10100 Balikesir, Turkey

[4] USA, Res Off, Res Triangle Pk, NC 27709 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 17期

关键词：

D O I：

10.1063/1.1713034

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Stimulated emission (SE) was measured from ZnO thin films grown on c-plane sapphire by rf sputtering. Free exciton transitions were clearly observed at 10 K in the photoluminescence (PL), transmission, and reflection spectra of the sample annealed at 950degreesC. SE resulting from both exciton-exciton scattering and electron hole plasma formation was observed in the annealed samples at moderate excitation energy densities. The SE threshold energy density decreased with increasing annealing temperature up to similar to950 degreesC. The observation of low threshold exciton-exciton scattering-induced SE showed that excitonic laser action could be obtained in rf-sputtered ZnO thin films. At excitation densities below the SE threshold, time-resolved PL revealed very fast recombination times of similar to74 ps at room temperature, and no significant change at 85 K. The decay time for the SE-induced PL was below the system resolution of <45 ps. (C) 2004 American Institute of Physics.

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页码：3223 / 3225

页数：3

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