Photophysical properties of TlGaS2 layered single crystals

被引：30

作者：

Ashraf, IM ^{[1
]}

机构：

[1] S Valley Univ, Fac Sci Aswan, Dept Phys, Aswan, Egypt

来源：

JOURNAL OF PHYSICAL CHEMISTRY B | 2004年 / 108卷 / 30期

关键词：

D O I：

10.1021/jp0311411

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The photoconductivity (PC) of TlGaS2 layered single crystals was investigated in the 77-300 K temperature, 1000-2500 1x excitation intensity, 10-25 V applied voltage, and 415-535 nm wavelength ranges. Both the alternating current photoconductivity (ac-PC) and the spectral distribution of the photocurrent were studied at different values of light intensity, applied voltage, and temperature. Dependencies of the carrier lifetime on light intensity, applied voltage, and temperature have been investigated as a result of the ac-PC and direct current photoconductivity (dc-PC) measurements. The temperature dependence of the energy gap width was described as a result of studying the dc-PC. The values of the photoconductivity response time, which are reported from the light intensity dependence of ac-PC, presents that there is a continuous distribution of traps in the energy gap.

引用

页码：10765 / 10769

页数：5

共 26 条

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