Vertical quantum dots at high magnetic fields beyond the few-electron limit

We describe phenomena that can be studied in vertical quantum dot single electron transistors, Moving from the few-electron to the several- and many-electron regimes, features in the conductance peaks initially related to spin polarization evolve with magnetic field. This allows us to first probe the spin-flip region beyond the last single-particle crossing at low field, and then the formation and stability of the spin-polarized maximum density droplet at high field. According to a simple capacitance model, charge redistribution in the dot at higher magnetic fields is accompanied by abrupt changes in the area of the droplet. (C) 2000 Elsevier Science B.V. All rights reserved.