Upper limits for the residual aberrations of a high-resolution aberration-corrected STEM

被引:129
作者
Haider, M [1 ]
Uhlemann, S [1 ]
Zach, J [1 ]
机构
[1] CEOS GMBH, D-69126 Heidelberg, Germany
关键词
D O I
10.1016/S0304-3991(99)00194-1
中图分类号
TH742 [显微镜];
学科分类号
摘要
The development of correctors for electron optical systems has already brought the improvement of resolution for a low-voltage scanning electron microscope and a commercially available transmission electron microscope and is anticipated in the near future for a dedicated scanning transmission electron microscope (STEM). The resolution attainable especially of a probe-forming system at 200 kV cannot only be estimated from calculations ignoring all non-rotationally symmetric axial aberrations in an electron optical system. For a certain resolution, one would like to attain, the influence of the deviations from the ideal, aberration-free system has to be investigated. Therefore, in the following we have carried out the evaluation of the required accuracy for the compensation of the various residual aberrations in order to achieve a resolution in the sub-Angstrom regime with a probe-forming system. (C) 2000 Published by Elsevier Science B.V. All rights reserved.
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页码:163 / 175
页数:13
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