Nucleation mechanism of microcrystalline silicon from the amorphous phase

被引：27

作者：

Fujiwara, H ^{[1
]}

Kondo, M ^{[1
]}

Matsuda, A ^{[1
]}

机构：

[1] AIST, Tsukuba, Ibaraki 3058568, Japan

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2004年 / 338卷

关键词：

D O I：

10.1016/j.jnoncrysol.2004.02.029

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Low-temperature formation (<400 degreesC) of microcrystalline silicon (muc-Si:H) using plasma-enhanced chemical vapor deposition (PECVD) has been investigated. We find that a high intrinsic stress in the hydrogenated amorphous silicon (a-Si:H) phase is essential for muc-Si:H nucleation from the amorphous phase and muc-Si:H nucleation was observed only when compressive stress inside a-Si:H exceeds similar to750 MPa, regardless of deposition temperature. Detailed studies employing real-time spectroscopic ellipsometry and infrared spectroscopy revealed the unique role of H for stress generation and muc-Si:H nucleation. In this article, based on our recent studies, we review the nucleation mechanism of muc-Si:H from the amorphous phase. (C) 2004 Elsevier B.V. All rights reserved.

引用

收藏

页码：97 / 101

页数：5

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