Observations of NBTI-induced atomic-scale defects

被引：51

作者：

Campbell, Jason P. ^{[1
]}

Lenahan, Patrick M.

Krishnan, Anand T.

Krishnan, Srikanth

机构：

[1] Penn State Univ, University Pk, PA 16802 USA

[2] Texas Instruments Inc, Dallas, TX 75243 USA

来源：

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2006年 / 6卷 / 02期

关键词：

interface defects; magnetic resonance; MOSFET; negative bias temperature instability (NBTI); spin-dependent recombination (SDR);

D O I：

10.1109/TDMR.2006.876598

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A combination of MOSFET gate-controlled diode measurements and a very sensitive electron spin resonance technique called spin-dependent recombination was utilized to observe and identify defect centers generated by a negative bias temperature stress in fully processed SiO2-based pMOSFETs. In SiO2 devices, the defects include two Si/SiO2 interface silicon dangling bond centers (P-b0 and P-b1) and may also include an oxide silicon dangling bond center (E'). The observations indicate that both P-b0 and P-b1. defects play major roles in these SiO2-based devices and suggest that E' centers could play an important role.

引用

页码：117 / 122

页数：6