Thickness dependent characteristics of a copper phthalocyanine thin-film transistor investigated by in situ FET measurement system

被引：7

作者：

Ikeda, Susumu ^{[1
]}

Yamakawa, Hidemitsu

Kiguchi, Manabu

Nakayama, Manabu

Saiki, Koichiro

Shimada, Toshihiro

Miyadera, Tetsuhiko

Tsutsui, Ken

Wada, Yasuo

机构：

[1] Univ Tokyo, Dept Complex Sci & Engn, Grad Sch Frontier Sci, Chiba 2778561, Japan

[2] Univ Tokyo, Dept Chem, Grad Sch Sci, Bunkyo Ku, Tokyo, Japan

[3] Waseda Univ, Nanaotechnol Res Lab, Shinjuku Ku, Tokyo, Japan

来源：

MOLECULAR CRYSTALS AND LIQUID CRYSTALS | 2006年 / 455卷

关键词：

copper phthalocyanine; in situ FET measurement; organic thin-film transistor; thickness dependence;

D O I：

10.1080/15421400600699004

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The influence of active layer thickness on transport characteristics of a copper phthalocyanine thin-film transistor was investigated by using the in situ FET measurement system with the film deposition continued up to several hundred nm in thickness. The drain current and mobility showed maximum values in the early stage of film growth and then decreased with the increasing film thickness. This result suggests that the over-grown layer affects the transport characteristics of the conductive accumulation layer, for example, owing to change of the electric field in the device.

引用

页码：347 / 351

页数：5

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