High epitaxial quality Y2O3 high-κ dielectric on vicinal Si(001) surfaces

被引：42

作者：

Apostolopoulos, G ^{[1
]}

Vellianitis, G

Dimoulas, A

Alexe, M

Scholz, R

Fanciulli, M

Dekadjevi, DT

Wiemer, C

机构：

[1] Natl Ctr Sci Res Demokritos, Inst Mat Sci, Mol Beam Epitaxy Lab, Aghia Paraskevi 15310, Greece

[2] Max Planck Inst Mikrostrukturphys, D-06120 Halle An Der Saale, Germany

[3] Ist Nazl Fis Mat, Lab MDM, I-20041 Agrate Brianza, Italy

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 19期

关键词：

D O I：

10.1063/1.1519727

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin films of Y2O3 were grown by molecular-beam epitaxy on silicon aiming at material with adequate crystal quality for use as high-kappa gate replacements in future transistors. It was found that Y2O3 grows in single-crystalline form on 4degrees misoriented Si(001), due to an in-plane alignment of [110](Y2O2) to the silicon dimer direction. The Y2O3 layers exhibit a low degree of mosaicity, a small proportion of twinning and sharp interfaces. This represents a significant improvement compared to material grown on exact silicon surfaces. (C) 2002 American Institute of Physics.

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页码：3549 / 3551

页数：3

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