Break-junction measurements of CeNiSn under magnetic fields

被引：4

作者：

Ekino, T ^{[1
]}

Takabatake, T ^{[1
]}

Fujii, H ^{[1
]}

机构：

[1] HIROSHIMA UNIV,FAC SCI,HIGASHIHIROSHIMA 739,JAPAN

来源：

PHYSICA B | 1997年 / 230卷

关键词：

break junction; magnetic field; CeNiSn;

D O I：

10.1016/S0921-4526(96)00726-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Magnetic-field effect of the dynamic conductance of the Kondo-semiconductor CeNiSn has been investigated using a break-junction technique. With increasing field up to 5.8 T at 4.2 K, the gap magnitude 4 Delta defined by the peak-to-peak separation of the conductance decreases by 22-26% of its zero-field value of 16-17 meV, accompanied by 10% increase of the normalized zero-bias conductance. These results give an evidence for the substantial suppression of the energy gap in these field strengths.

引用

页码：635 / 637

页数：3

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