Magnetoresistance and the anisotropic hybridization gap in CeNiSn

被引:23
作者
Inada, Y
Azuma, H
Settai, R
Aoki, D
Onuki, Y
Kobayashi, K
Takabatake, T
Nakamoto, G
Fujii, H
Maezawa, K
机构
[1] HIROSHIMA UNIV, FAC SCI, HIGASHIHIROSHIMA 739, JAPAN
[2] HIROSHIMA UNIV, FAC INTEGRATED ARTS & SCI, HIGASHIHIROSHIMA 739, JAPAN
[3] TOYAMA PREFECTURAL UNIV, FAC ENGN, TOYAMA 93903, JAPAN
关键词
CeNiSn; magnetoresistance; hybridization gap;
D O I
10.1143/JPSJ.65.1158
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We have measured the magnetoresistance of the orthorhombic CeNiSn at high fields up to 15 T and at low temperatures down to 0.4 K. The positive magnetoresistance is found to become dominant with the decrease of temperature for the magnetic field H applied along the b- and c-axes in the transverse configuration between the current J and the held H (J perpendicular to H). On the other hand, the longitudinal magnetoresistance (J parallel to H) is small in magnitude for H parallel to b and c. For H parallel to a, the magnetoresistance is negative for any current direction. These experimental results have been discussed on the basis of the cyclotron motion of the compensated carriers with closed Fermi surfaces and the reduction of the anisotropic hybridization gap.
引用
收藏
页码:1158 / 1161
页数:4
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