Crystal growth and characterization of the Kondo semimetal CeNiSn

被引:99
作者
Nakamoto, G
Takabatake, T
Fujii, H
Minami, A
Maezawa, K
Oguro, I
Menovsky, AA
机构
[1] HIROSHIMA UNIV, FAC SCI, HIGASHIHIROSHIMA 739, JAPAN
[2] TOYAMA PREFECTURAL UNIV, FAC ENGN, TOYAMA 93903, JAPAN
[3] UNIV TOKYO, INST SOLID STATE PHYS, TOKYO 106, JAPAN
[4] UNIV AMSTERDAM, VAN WAALS ZEEMAN LAB, AMSTERDAM, NETHERLANDS
关键词
Kondo semimetal; CeNiSn; magnetoresistance; energy gap;
D O I
10.1143/JPSJ.64.4834
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Several single crystals of CeNiSn and CeNi0.95T0.05 Sn (T = Co and Cu) were grown and characterized by metallographic examination, electron-probe microanalysis and the measurements of resistivity, magnetoresistance, magnetic susceptibility and specific heat. Below 10 K, the semiconductor-like behavior found for dirty or substituted crystals is suppressed with decreasing impurities. For a crystal purified by the solid-state electrotransport technique, the resistivity along the orthorhombic a axis is metallic with the T-2 dependence, whereas those along the b and c axes increase below 3 K and pass through weak maxima at 0.8 K. These results suggest that the ground state of CeNiSn is not semiconducting but semimetallic with a pseudogap which closes along the a axis.
引用
收藏
页码:4834 / 4840
页数:7
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