Carrier dynamics and recombination processes of charged excitons in a GaAs/AlGaAs quantum well

被引：10

作者：

Hogg, RA

Sanvitto, D

Shields, AJ

Simmons, MY

Ritchie, DA

Pepper, M

机构：

[1] Toshiba Res Europe Ltd, Cambridge Res Lab, Cambridge CB4 0WE, England

[2] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

来源：

PHYSICA B | 1999年 / 272卷 / 1-4期

关键词：

time resolved PL; excitons; charged excitons;

D O I：

10.1016/S0921-4526(99)00359-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report a time-resolved photoluminescence study of neutral (X) and negatively charged (X-) excitons in GaAs/AlGaAs quantum wells under resonant excitation conditions. For X the temporal evolution of luminescence is dominated by three decays attributed to resonant Rayleigh scattering, resonantly created cold excitons, and an exciton population thermalized to the lattice temperature. By contrast, for X- we find only one temperature-dependent decay. We discuss these results in terms of the polariton description of radiative recombination. (C) 1999 Published by Elsevier Science B.V. All rights reserved.

引用

页码：412 / 415

页数：4

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