Evidence for the improved defect-pool model for gap states in amorphous silicon from charge DLTS experiments on undoped a-Si:H

被引：36

作者：

Nadazdy, V ^{[1
]}

Durny, R ^{[1
]}

Pincik, E ^{[1
]}

机构：

[1] SLOVAK UNIV TECHNOL BRATISLAVA, FEI, DEPT PHYS, BRATISLAVA 81219, SLOVAKIA

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 78卷 / 06期

关键词：

D O I：

10.1103/PhysRevLett.78.1102

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Results of the first charge deep level transient spectroscopy (DLTS) measurements on undoped a-Si:H are presented. The ability of the charge DLTS technique to resolve the gag-state distribution and to monitor directly its evolution after preequilibrium preparation by bias annealing is demonstrated. Three groups of gap states with mean energies of 0.63, 0.82, and 1.25 eV are observed. The condition for their creation as well as the energy values are in a good agreement with the D+, D-0, and D- states of the improved defect-pool model.

引用

页码：1102 / 1105

页数：4

共 11 条

[1] CALCULATION OF THE DYNAMIC-RESPONSE OF SCHOTTKY BARRIERS WITH A CONTINUOUS DISTRIBUTION OF GAP STATES [J].

COHEN, JD ;

LANG, DV .

PHYSICAL REVIEW B, 1982, 25 (08) :5321-5350

[2] DEFECT RELAXATION IN AMORPHOUS-SILICON - STRETCHED EXPONENTIALS, THE MEYER-NELDEL RULE, AND THE STAEBLER-WRONSKI EFFECT [J].

CRANDALL, RS .

PHYSICAL REVIEW B, 1991, 43 (05) :4057-4070

[3]

FARMER JW, 1982, APPL PHYS LETT, V41, P1064

[4] CONNECTION BETWEEN THE MEYER-NELDEL RELATION AND MULTIPLE-TRAPPING TRANSPORT [J].

JACKSON, WB .

PHYSICAL REVIEW B, 1988, 38 (05) :3595-3598

[5] MEASUREMENT OF THE DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY SPACE-CHARGE SPECTROSCOPY [J].

LANG, DV ;

COHEN, JD ;

HARBISON, JP .

PHYSICAL REVIEW B, 1982, 25 (08) :5285-5320

[6] IMPROVED FEEDBACK CHARGE METHOD FOR QUASI-STATIC CV MEASUREMENTS IN SEMICONDUCTORS [J].

MEGO, TJ .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1986, 57 (11) :2798-2805

[7] IMPROVED DEFECT-POOL MODEL FOR CHARGED DEFECTS IN AMORPHOUS-SILICON [J].

POWELL, MJ ;

DEANE, SC .

PHYSICAL REVIEW B, 1993, 48 (15) :10815-10827

[8] ON THE RELATIONSHIP BETWEEN THE FEEDBACK CHARGE METHOD, CHARGE TRANSIENT SPECTROSCOPY AND C-V MEASUREMENTS OF SEMICONDUCTORS AND INSULATORS [J].

THURZO, I ;

GRENDEL, M .

MEASUREMENT SCIENCE AND TECHNOLOGY, 1992, 3 (08) :726-731

[9] CHEMICAL-EQUILIBRIUM DESCRIPTION OF THE GAP-STATE DISTRIBUTION IN ALPHA-SI-H [J].

WINER, K .

PHYSICAL REVIEW LETTERS, 1989, 63 (14) :1487-1490

[10] DEFECT FORMATION IN ALPHA-SI-H [J].

WINER, K .

PHYSICAL REVIEW B, 1990, 41 (17) :12150-12161

← 1 2 →