DEFECT FORMATION IN ALPHA-SI-H

被引：130

作者：

WINER, K ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

PHYSICAL REVIEW B | 1990年 / 41卷 / 17期

关键词：

D O I：

10.1103/PhysRevB.41.12150

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The bulk chemical processes responsible for defect equilibria in hydrogenated amorphous silicon (a-Si:H) are examined. Thermodynamic analyses of the corresponding chemical reactions are shown to account quantitatively for the observed defect-state-energy distribution and dependence of the defect concentration on temperature and Fermi energy. The dependence of a-Si:H defect properties on growth conditions is addressed. © 1990 The American Physical Society.

引用

页码：12150 / 12161

页数：12

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