ENERGY-DISTRIBUTION AND THERMAL BROADENING OF BAND TAIL STATES IN DOPED AND UNDOPED HYDROGENATED AMORPHOUS-SILICON

被引：2

作者：

ALJISHI, S

COHEN, JD

LEY, L

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1989年 / 114卷

关键词：

D O I：

10.1016/0022-3093(89)90126-9

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：247 / 249

页数：3

共 6 条

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STREET, RA ;

HACK, M ;

JACKSON, WB .

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[4] EXPONENTIAL CONDUCTION-BAND TAIL IN P-DOPED A-SI-H [J].

WINER, K ;

HIRABAYASHI, I ;

LEY, L .

PHYSICAL REVIEW LETTERS, 1988, 60 (25) :2697-2700

[5] SURFACE-STATES AND THE EXPONENTIAL VALENCE-BAND TAIL IN ALPHA-SI-H [J].

WINER, K ;

LEY, L .

PHYSICAL REVIEW B, 1987, 36 (11) :6072-6078

[6] DISTRIBUTION OF OCCUPIED NEAR-SURFACE BAND-GAP STATES IN A-SI-H [J].

WINER, K ;

HIRABAYASHI, I ;

LEY, L .

PHYSICAL REVIEW B, 1988, 38 (11) :7680-7693

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