MECHANISMS OF THERMAL EQUILIBRATION IN DOPED AMORPHOUS-SILICON

[1] STRUCTURE AND ELECTRONIC STATES IN DISORDERED-SYSTEMS [J]. PHYSICAL REVIEW LETTERS, 1986, 57 (04) : 467 - 470

[2] HYDROGENATED MICROVOIDS AND LIGHT-INDUCED DEGRADATION OF AMORPHOUS-SILICON SOLAR-CELLS [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 41 (04): : 305 - 309

[3] MASTER-EQUATION APPROACH TO THE GLASS-TRANSITION [J]. PHYSICAL REVIEW LETTERS, 1987, 58 (08) : 792 - 795

[4] HACK M, UNPUB

[5] JACKSON WB, 1987, SOL CELLS, V21, P431, DOI 10.1016/0379-6787(87)90141-4

[6] ENERGY-DEPENDENCE OF THE OPTICAL MATRIX ELEMENT IN HYDROGENATED AMORPHOUS AND CRYSTALLINE SILICON [J]. PHYSICAL REVIEW B, 1985, 31 (08): : 5187 - 5198

[7] MEASUREMENT OF DEEP LEVELS IN HYDROGENATED AMORPHOUS-SILICON BY TRANSIENT VOLTAGE SPECTROSCOPY [J]. APPLIED PHYSICS LETTERS, 1983, 42 (11) : 981 - 983

[8] STRETCHED-EXPONENTIAL RELAXATION ARISING FROM DISPERSIVE DIFFUSION OF HYDROGEN IN AMORPHOUS-SILICON [J]. PHYSICAL REVIEW LETTERS, 1987, 59 (09) : 1037 - 1040

[9] ELECTRONIC TRANSPORT IN DOPED AMORPHOUS-SILICON [J]. PHYSICAL REVIEW B, 1986, 34 (08): : 6014 - 6017

[10] MEASUREMENT OF THE DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY SPACE-CHARGE SPECTROSCOPY [J]. PHYSICAL REVIEW B, 1982, 25 (08) : 5285 - 5320

[1] STRUCTURE AND ELECTRONIC STATES IN DISORDERED-SYSTEMS [J]. PHYSICAL REVIEW LETTERS, 1986, 57 (04) : 467 - 470

[2] HYDROGENATED MICROVOIDS AND LIGHT-INDUCED DEGRADATION OF AMORPHOUS-SILICON SOLAR-CELLS [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 41 (04): : 305 - 309

[3] MASTER-EQUATION APPROACH TO THE GLASS-TRANSITION [J]. PHYSICAL REVIEW LETTERS, 1987, 58 (08) : 792 - 795

[4] HACK M, UNPUB

[5] JACKSON WB, 1987, SOL CELLS, V21, P431, DOI 10.1016/0379-6787(87)90141-4

[6] ENERGY-DEPENDENCE OF THE OPTICAL MATRIX ELEMENT IN HYDROGENATED AMORPHOUS AND CRYSTALLINE SILICON [J]. PHYSICAL REVIEW B, 1985, 31 (08): : 5187 - 5198

[7] MEASUREMENT OF DEEP LEVELS IN HYDROGENATED AMORPHOUS-SILICON BY TRANSIENT VOLTAGE SPECTROSCOPY [J]. APPLIED PHYSICS LETTERS, 1983, 42 (11) : 981 - 983

[8] STRETCHED-EXPONENTIAL RELAXATION ARISING FROM DISPERSIVE DIFFUSION OF HYDROGEN IN AMORPHOUS-SILICON [J]. PHYSICAL REVIEW LETTERS, 1987, 59 (09) : 1037 - 1040

[9] ELECTRONIC TRANSPORT IN DOPED AMORPHOUS-SILICON [J]. PHYSICAL REVIEW B, 1986, 34 (08): : 6014 - 6017

[10] MEASUREMENT OF THE DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY SPACE-CHARGE SPECTROSCOPY [J]. PHYSICAL REVIEW B, 1982, 25 (08) : 5285 - 5320