ELECTRONIC TRANSPORT IN DOPED AMORPHOUS-SILICON

被引：82

作者：

KAKALIOS, J

STREET, RA

机构：

来源：

PHYSICAL REVIEW B | 1986年 / 34卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.34.6014

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6014 / 6017

页数：4

共 18 条

[1]

ANDERSON DA, 1982, PHILOS MAG B, V45, P1, DOI 10.1080/01418618208243899

[2]

AST DG, 1979, I PHYS C SER, V43, P1159

[3] CHARACTERIZATION OF GLOW-DISCHARGE DEPOSITED A-SI-H [J].

FRITZSCHE, H .

SOLAR ENERGY MATERIALS, 1980, 3 (04) :447-501

[4]

FRITZSCHE H, 1981, AIP C P, V73, P318

[5]

Hindley N. K., 1970, Journal of Non-Crystalline Solids, V5, P17, DOI 10.1016/0022-3093(70)90193-6

[6] IMPLICATIONS OF RECENT DENSITY-OF-STATES MEASUREMENTS FOR OPTICAL AND TRANSPORT-PROPERTIES OF A-SI-H [J].

JACKSON, WB ;

TSAI, CC ;

KELSO, SM .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 :281-290

[7] ENERGY-DEPENDENCE OF THE OPTICAL MATRIX ELEMENT IN HYDROGENATED AMORPHOUS AND CRYSTALLINE SILICON [J].

JACKSON, WB ;

KELSO, SM ;

TSAI, CC ;

ALLEN, JW ;

OH, SJ .

PHYSICAL REVIEW B, 1985, 31 (08) :5187-5198

[8] METAL-INSULATOR TRANSITIONS IN NON-CRYSTALLINE SYSTEMS [J].

MOTT, NF .

ADVANCES IN PHYSICS, 1985, 34 (03) :329-401

[9] THE PRE-EXPONENTIAL FACTOR IN THE CONDUCTIVITY OF AMORPHOUS-SILICON [J].

MOTT, NF .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 51 (01) :19-25

[10] ELECTRONIC TRANSPORT IN HYDROGENATED AMORPHOUS-SILICON [J].

OVERHOF, H ;

BEYER, W .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1983, 47 (04) :377-392

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