IMPLICATIONS OF RECENT DENSITY-OF-STATES MEASUREMENTS FOR OPTICAL AND TRANSPORT-PROPERTIES OF A-SI-H

被引:23
作者
JACKSON, WB
TSAI, CC
KELSO, SM
机构
[1] Xerox Palo Alto Research Cent, Palo, Alto, CA, USA, Xerox Palo Alto Research Cent, Palo Alto, CA, USA
关键词
HYDROGEN INORGANIC COMPOUNDS - SILICON AND ALLOYS - Hydrogenation;
D O I
10.1016/0022-3093(85)90657-X
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this paper, recent developments in the determination of the density-of-states (DOS) for hydrogenated amorphous silicon are reviewed, and the implications of these measurements for optical and transport measurements are discussed. The DOS derived from electron spectroscopies is remarkably consistent with DOS obtained from optical absorption, photoconductivity, and capacitance measurements. Both optical and transport measurements indicate that the phase coherence of the conduction band states is less than one lattice spacing. Some remaining questions regarding the DOS are briefly presented.
引用
收藏
页码:281 / 290
页数:10
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