High pressure X-ray absorption and diffraction study of InAs

被引:13
作者
Pascarelli, S
Aquilanti, G
Crichton, W
Le Bihan, T
De Panfilis, S
Fabiani, E
Mezouar, M
Itie, JP
Polian, A
机构
[1] European Synchrotron Radiat Facil, F-38043 Grenoble, France
[2] Univ Paris 06, PMC, F-75252 Paris, France
[3] Univ Camerino, Dipartimento Matemat & Fis, I-62032 Camerino, Italy
[4] Univ Camerino, UdR, INFM, I-62032 Camerino, Italy
关键词
high pressure; III-V semiconductors; X-ray diffraction; X-ray absorption; phase stability;
D O I
10.1080/08957950212813
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
we have performed X-ray absorption (XAS) and diffraction (XRD) measurements at high pressure on samples of powdered InAs, up to 50 and 80 GPa, respectively. In the lower pressure range, our data are consistent with the following structural sequence: Zincblende-->NaCl-->Cmcm. The first order transition from the semiconducting Zincblende phase to the metallic NaCl phase is clearly seen by the shift in the absorption onset at the As K-edge and the strong modifications of the extended X-ray absorption fine structure (EXAFS) due to the changes in the local structure from a 4-fold to a 6-fold coordinated environment. XAS shows the high pressure phase to be locally site-ordered. The diffraction data, analized by Rietveld fitting, gives a volume discontinuity of DeltaV/V-0 similar to0.18 for the first order transition. There is no apparent volume discontinuity associated to the NaCl --> Cmcm transition.
引用
收藏
页码:331 / 335
页数:5
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