Light-emitting diodes with integrated omnidirectionally reflective contacts

被引:15
作者
Gessmann, T [1 ]
Luo, H [1 ]
Xia, JQ [1 ]
Streubel, K [1 ]
Schubert, EF [1 ]
机构
[1] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA
来源
LIGHT -EMITTING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS VIII | 2004年 / 5366卷
关键词
D O I
10.1117/12.527952
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
An electrically conductive onmidirectional reflector (ODR) is demonstrated as p-type ohmic contact for an AlGaInP light-emitting diode (LED). The ODR comprises the semiconductor, a Ag metal layer and an intermediate SiO2 low-refractive index dielectric layer. The SiO2 layer, located between the LED semiconductor and the silver layer, is perforated by an array of AuZn micro-contacts thus enabling electrical conductivity. It is shown that the ODR-LED has a significantly higher light-extraction efficiency as compared to LEDs employing distributed Bragg reflectors (DBRs). For devices emitting in the red wavelength range, external quantum efficiencies of 18% and 11% are obtained for ODR- and DBR-LEDs, respectively. The performance of the ODR-LED can be further increased by replacing the SiO2 dielectric with materials having a refractive index much less than 1.45. Performance characteristics of such powerful reflectors will be presented.
引用
收藏
页码:53 / 61
页数:9
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