Internal stress of sputtered amorphous carbon nitride thin films

被引:26
作者
Durand-Drouhin, O [1 ]
Benlahsen, M [1 ]
机构
[1] Fac Sci Amiens, Phys Mat Condensee Lab, F-80039 Amiens 2, France
关键词
disordered systems; surface and interfaces; thin films; mechanical properties;
D O I
10.1016/j.ssc.2004.06.013
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 [凝聚态物理];
摘要
Analysis of amorphous carbon nitride thin films (a-CNx) deposited by RF magnetron sputtering on (100) silicon wafers under different target self-bias (V-b) is reported. The a-CNx films composition and microstructure have been determined combining many characterisation techniques, which revealed their porous character and their post deposition contamination by oxygen and water vapour. The residual stresses in the films were determined by measuring the curvature of the Si substrate before and after film deposition. Their low values and their evolution versus V-b are attributed to a competition between tensile stress originating from growth and compressive stress from the interaction between gaseous inclusions. (C) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码:425 / 429
页数:5
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