Reactive wetting in the liquid-silicon/solid-carbon system

被引：86

作者：

Li, JG ^{[1
]}

Hausner, H ^{[1
]}

机构：

[1] TECH UNIV BERLIN,INST NICHTMET WERKSTOFFE,D-10587 BERLIN,GERMANY

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1996年 / 79卷 / 04期

关键词：

D O I：

10.1111/j.1151-2916.1996.tb08519.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The wettability of glassy carbon by liquid silicon has been investigated at 1430 degrees C in argon by using techniques of both in situ formation and capillary formation of sessile drops. Analyses of the results showed that there are three distinct contributions of reaction to wetting: (a) dissolution of solid substrate carbon in liquid silicon; (b) formation of a continuous SiC layer at the solid side of the interface, and (c) a contribution of the free energy released by the reaction localized at the interface between liquid silicon and solid carbon.

引用

页码：873 / 880

页数：8

共 34 条

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