Resonant magnetopolaron effects due to interface phonons in GaAs/AlGaAs multiple quantum well structures

被引：42

作者：

Wang, YJ

Nickel, HA

McCombe, BD

Peeters, FM

Shi, JM

Hai, GQ

Wu, XG

Eustis, TJ

Schaff, W

机构：

[1] SUNY BUFFALO,DEPT PHYS,BUFFALO,NY 14260

[2] UNIV ANTWERP,DEPT NAT KUNDE,B-2610 ANTWERP,BELGIUM

[3] UNIV FED SAO CARLOS,DEPT FIS,BR-13565905 SAO CARLOS,SP,BRAZIL

[4] CHINESE ACAD SCI,INST SEMICOND,NATL LAB SUPERLATT & MICROSTRUCT,BEIJING 100083,PEOPLES R CHINA

[5] CORNELL UNIV,DEPT ELECT ENGN,ITHACA,NY 14853

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 79卷 / 17期

关键词：

D O I：

10.1103/PhysRevLett.79.3226

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Polaron cyclotron resonance (CR) has been studied in three modulation-doped GaAs/Al0.3Ga0.7As multiple quantum well structures in magnetic field up to 30 T. Large avoided-level-crossing splittings of the CR near the GaAs reststrahlen region, and smaller splittings in the region of the AlAs-like optical phonons of th AlGaAs barriers, are observed. Based on a comparison with a detailed theoretical calculation, the high frequency splitting, the magnitude of which increases with decreasing well width, is assigned to resonant polaron interactions with AlAs-like interface phonons.

引用

页码：3226 / 3229

页数：4

共 24 条

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