Effects of buffer layer thickness on growth and properties of ZnO nanorods grown by metalorganic chemical vapour deposition

被引:41
作者
Kim, Dong Chan
Kong, Bo Hyun
Cho, Hyung Koun
Park, Dong Jun
Lee, Jeong Yong
机构
[1] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, Gyeonggi, South Korea
[2] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
关键词
D O I
10.1088/0957-4484/18/1/015603
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We investigated the effect of the buffer layer thickness on the structural and optical properties of ZnO nanorods grown on Si substrates by metalorganic chemical vapour deposition. Increasing the thickness of the buffer layer significantly enhanced the vertical alignment and density of the nanorods. The ZnO nanorods grown on the buffer layer with a thickness exceeding 500 nm were inclined on the substrate surface, due to the formation of a rugged morphology with a pyramidal shape on the surface of the buffer layer, which was attributed to the surface undulation resulting from the increased tensile strain. This inclination also resulted in a decrease in the intensity of the (0002) ZnO diffraction peak and the ultraviolet emission peak. This paper discusses the microstructural properties and growth mechanism of the ZnO nanorods on buffer layers with various thicknesses.
引用
收藏
页数:6
相关论文
共 27 条
[11]   Semiconductor devices - Light-emitting diodes as chemical sensors [J].
Ivanisevic, A ;
Yeh, JY ;
Mawst, L ;
Kuech, TF ;
Ellis, AB .
NATURE, 2001, 409 (6819) :476-476
[12]   Synthesis and optical properties of well-aligned ZnO nanorod array on an undoped ZnO film [J].
Jie, JS ;
Wang, GZ ;
Chen, YM ;
Han, XH ;
Wang, QT ;
Xu, B ;
Hou, JG .
APPLIED PHYSICS LETTERS, 2005, 86 (03) :1-3
[13]   Ultraviolet-emitting ZnO nanowires synthesized by a physical vapor deposition approach [J].
Kong, YC ;
Yu, DP ;
Zhang, B ;
Fang, W ;
Feng, SQ .
APPLIED PHYSICS LETTERS, 2001, 78 (04) :407-409
[14]   Recent advances in ZnO materials and devices [J].
Look, DC .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 80 (1-3) :383-387
[15]   Low temperature growth and photoluminescence of well-aligned zinc oxide nanowires [J].
Lyu, SC ;
Zhang, Y ;
Ruh, H ;
Lee, HJ ;
Shim, HW ;
Suh, EK ;
Lee, CJ .
CHEMICAL PHYSICS LETTERS, 2002, 363 (1-2) :134-138
[16]  
MADELUNG O, 1982, NUMERICAL DATA FUNCT, V176, P45
[17]   Effect of strain in the barrier layer on structural and optical properties of highly strained In0.77Ga0.23As/InGaAs multiple quantum wells [J].
Mitsuhara, M ;
Ogasawara, M ;
Sugiura, H .
JOURNAL OF CRYSTAL GROWTH, 2000, 210 (04) :463-470
[18]   Quantum confinement observed in ZnO/ZnMgO nanorod heterostructures [J].
Park, WI ;
Yi, GC ;
Kim, M ;
Pennycook, SJ .
ADVANCED MATERIALS, 2003, 15 (06) :526-529
[19]   Metalorganic vapor-phase epitaxial growth of vertically well-aligned ZnO nanorods [J].
Park, WI ;
Kim, DH ;
Jung, SW ;
Yi, GC .
APPLIED PHYSICS LETTERS, 2002, 80 (22) :4232-4234
[20]   Valence-band ordering in ZnO [J].
Reynolds, DC ;
Look, DC ;
Jogai, B ;
Litton, CW ;
Cantwell, G ;
Harsch, WC .
PHYSICAL REVIEW B, 1999, 60 (04) :2340-2344