Noncontact semiconductor wafer characterization with the terahertz Hall effect

被引：151

作者：

Mittleman, DM

Cunningham, J

Nuss, MC

Geva, M

机构：

[1] AT&T BELL LABS,LUCENT TECHNOL,HOLMDEL,NJ 07733

[2] LUCENT TECHNOL MICROELECT,BREINIGSVILLE,PA 18031

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 01期

关键词：

D O I：

10.1063/1.119456

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate noncontact measurements of the Hall mobility of doped semiconductor wafers with roughly 250 mu m spatial resolution, using polarization rotation of focused beams of terahertz (THz) radiation in the presence of a static magnetic field. Quantitative and independent images of both carrier density and mobility of a doped semiconductor wafer have been obtained. (C) 1997 American Institute of Physics.

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页码：16 / 18

页数：3

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