Enhanced carrier lifetimes and suppression of midgap states in GaAs at a magnetic metal interface

被引：26

作者：

Jonker, BT

Glembocki, OJ

Holm, RT

Wagner, RJ

机构：

[1] Naval Research Laboratory, Washington, DC

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 79卷 / 24期

关键词：

D O I：

10.1103/PhysRevLett.79.4886

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report the first measurement of room temperature carrier lifetimes at a magnetic metal-semiconductor interface, Fe/GaAs(001)-(2 x 4). The lifetimes are significantly enhanced relative to uncoated or sulfur-passivated surfaces. or the Al/GaAs(001)-(2 x 4) interface. These enhanced life-times correlate with a corresponding decrease in the density of midgap states which otherwise dominate the character of the GaAs(001) surface, The epitaxial Fe film provides both a ferromagnetic contact and a superior surface-passivating layer which does not pin the Fermi energy.

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页码：4886 / 4889

页数：4

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