Pressure-Dependent Metallic and Superconducting Phases in a Germanium Artificial Metal

被引：24

作者：

Cui, H. B. ^{[1
,2
]}

Graf, D. ^{[1
,2
]}

Brooks, J. S. ^{[1
,2
]}

Kobayashi, H. ^{[3
]}

机构：

[1] Florida State Univ, Dept Phys, Tallahassee, FL 32310 USA

[2] Florida State Univ, Natl High Magnet Field Lab, Tallahassee, FL 32310 USA

[3] Nihon Univ, Dept Chem, Coll Humanities & Sci, Tokyo 1568550, Japan

来源：

PHYSICAL REVIEW LETTERS | 2009年 / 102卷 / 23期

关键词：

UNTER HOHEM DRUCK; ELECTRICAL-RESISTIVITY; SYNCHROTRON-RADIATION; CRYSTAL STRUCTURES; TRANSITIONS; SI; SILICON; GE; FORM; TIN;

D O I：

10.1103/PhysRevLett.102.237001

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Germanium (Ge) becomes an "artificial metal" and a superconductor (T(c)similar to 5 K) above the pressure-induced semiconductor-(diamond structure)-to-metal (beta-Sn structure) transition at 10 GPa. We report single crystal resistance studies of the pressure-dependent metallic and metastable phases in the range 2.6 to 23 GPa, and show for a controlled pressure release, Ge is a metastable metal below 3 GPa. We find Ge has a superconducting upper critical field of 300 Oe (at 10.7 GPa and 1.8 K), above which a positive magnetoresistance consistent with that of a compensated closed orbit metal is observed.

引用

页数：4

共 34 条

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