High-pressure Raman spectroscopy of graphene

被引：177

作者：

Proctor, John E. ^{[1
,2
]}

Gregoryanz, Eugene ^{[1
,2
]}

Novoselov, Konstantin S. ^{[3
]}

Lotya, Mustafa ^{[4
]}

Coleman, Jonathan N. ^{[4
]}

Halsall, Matthew P. ^{[5
]}

机构：

[1] Univ Edinburgh, Sch Phys, Edinburgh EH9 3JZ, Midlothian, Scotland

[2] Univ Edinburgh, Ctr Sci Extreme Condit, Edinburgh EH9 3JZ, Midlothian, Scotland

[3] Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England

[4] Trinity Coll Dublin, Sch Phys, Dublin 2, Ireland

[5] Univ Manchester, Sch Elect & Elect Engn, Photon Sci Inst, Manchester M13 9PL, Lancs, England

来源：

PHYSICAL REVIEW B | 2009年 / 80卷 / 07期

基金：

英国工程与自然科学研究理事会;

关键词：

CARBON NANOTUBES; STRAIN; GRAPHITE; PHASE;

D O I：

10.1103/PhysRevB.80.073408

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In situ high-pressure Raman spectroscopy is used to study monolayer, bilayer, and few-layer graphene samples supported on silicon in a diamond anvil cell to 3.5 GPa. The results show that monolayer graphene adheres to the silicon substrate under compressive stress. A clear trend in this behavior as a function of graphene sample thickness is observed. We also study unsupported graphene samples in a diamond anvil cell to 8 GPa and show that the properties of graphene under compression are intrinsically similar to graphite. Our results demonstrate the differing effects of uniaxial and biaxial strain on the electronic band structure.

引用

页数：4

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