Coulomb blockade in a silicon/silicon-germanium two-dimensional electron gas quantum dot

被引：46

作者：

Klein, LJ ^{[1
]}

Slinker, KA

Truitt, JL

Goswami, S

Lewis, KLM

Coppersmith, SN

van der Weide, DW

Friesen, M

Blick, RH

Savage, DE

Lagally, MG

Tahan, C

Joynt, R

Eriksson, MA

Chu, JO

Ott, JA

Mooney, PM

机构：

[1] Univ Wisconsin, Madison, WI 53706 USA

[2] IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 20期

关键词：

D O I：

10.1063/1.1751612

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the fabrication and electrical characterization of a single electron transistor in a modulation doped silicon/silicon-germanium heterostructure. The quantum dot is fabricated by electron beam lithography and subsequent reactive ion etching. The dot potential and electron density are modified by laterally defined side gates in the plane of the dot. Low temperature measurements show Coulomb blockade with a single electron charging energy of 3.2 meV. (C) 2004 American Institute of Physics.

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收藏

页码：4047 / 4049

页数：3

相关论文

共 16 条

[1] Few-electron quantum dot circuit with integrated charge read out [J].

Elzerman, JM ;

Hanson, R ;

Greidanus, JS ;

van Beveren, LHW ;

De Franceschi, S ;

Vandersypen, LMK ;

Tarucha, S ;

Kouwenhoven, LP .

PHYSICAL REVIEW B, 2003, 67 (16)

[2] Practical design and simulation of silicon-based quantum-dot qubits [J].

Friesen, M ;

Rugheimer, P ;

Savage, DE ;

Lagally, MG ;

van der Weide, DW ;

Joynt, R ;

Eriksson, MA .

PHYSICAL REVIEW B, 2003, 67 (12) :4

[3] GATED HALL-EFFECT MEASUREMENTS IN HIGH-MOBILITY N-TYPE SI/SIGE MODULATION-DOPED HETEROSTRUCTURES [J].

ISMAIL, K ;

ARAFA, M ;

STERN, F ;

CHU, JO ;

MEYERSON, BS .

APPLIED PHYSICS LETTERS, 1995, 66 (07) :842-844

[4] EXTREMELY HIGH-ELECTRON-MOBILITY IN SI/SIGE MODULATION-DOPED HETEROSTRUCTURES [J].

ISMAIL, K ;

ARAFA, M ;

SAENGER, KL ;

CHU, JO ;

MEYERSON, BS .

APPLIED PHYSICS LETTERS, 1995, 66 (09) :1077-1079

[5] A silicon-based nuclear spin quantum computer [J].

Kane, BE .

NATURE, 1998, 393 (6681) :133-137

[6] Single-charge tunnelling in n- and p-type strained silicon germanium on silicon-on-insulator [J].

Kanjanachuchai, S ;

Bonar, JM ;

Ahmed, H .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1999, 14 (12) :1065-1068

[7] 80 nm gate-length Si/Si0.7Ge0.3 n-MODFET with 194 GHz fmax [J].

Koester, SJ ;

Saenger, KL ;

Chu, JO ;

Ouyang, QC ;

Ott, JA ;

Rooks, MJ ;

Canaperi, DF ;

Tornello, JA ;

Jahnes, C ;

Steen, SE .

ELECTRONICS LETTERS, 2003, 39 (23) :1684-1685

[8]

Kouwenhoven LP, 1997, NATO ADV SCI I E-APP, V345, P105

[9] Quantum-information processing with ferroelectrically coupled quantum dots [J].

Levy, J .

PHYSICAL REVIEW A, 2001, 64 (05) :7

[10]

LEWIS KM, UNPUB