Status of EUV microexposure capabilities at the ALS using the 0.3-NA MET optic

The success of recent static printing experiments at Lawrence Berkeley National Laboratory's Advanced Light Source (ALS) using the EUV LLC Engineering Test Stand (ETS) Set-2 optic has demonstrated the utility of synchrotron-based EUV exposure stations. Although not viable light sources for commercial lithography, synchrotrons provide clean, convenient. and extremely flexible sources for developmental microfield lithography. The great flexibility of synchrotron-based illumination arises from the fact that such sources facilitate active coherence reduction, thus enabling the coherence function, or pupil fill, to be actively sculpted in real time. As the commercialization of EUV progresses, the focus of developmental EUV lithography is shifting from low numerical aperture (NA) tools such as the 0.1-NA ETS to higher-NA tools such as the 0.3-NA Micro Exposure Tool (MET). To support printing with MET optics at the ALS. a new printing station has been developed, relying on a scanning illuminator to provide programmable coherence (pupil-fill) control. The illuminator is designed to operate up to a coherence factor (a) of 1 and support the full 200x600 design printed field of view. In addition to a new illuminator design. new focus sensing and dose-control systems have also been implemented. Here we describe the MET printing capabilities in detail and present preliminary printing results with the Sematech Set-2 MET optic.