Effects of surface passivation on breakdown of AlGaN/GaN high-electron-mobility transistors

被引：118

作者：

Ohno, Y ^{[1
]}

Nakao, T ^{[1
]}

Kishimoto, S ^{[1
]}

Maezawa, K ^{[1
]}

Mizutani, T ^{[1
]}

机构：

[1] Nagoya Univ, Dept Quantum Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 12期

关键词：

D O I：

10.1063/1.1687983

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of Si3N4 surface passivation on breakdown of AlGaN/GaN high-electron-mobility transistors was studied in detail by investigating dependences of the off-state breakdown voltage on temperature and gate reverse current, and by measuring electroluminescence distribution. Impact ionization in the channel which was triggered by the gate reverse current was responsible for the off-state breakdown. Surface passivation by Si3N4 film was effective to improve the off-state breakdown voltage. This has been explained by a change in the potential distribution due to suppression of electron trapping at the surface states, based on results of electroluminescence measurements. (C) 2004 American Institute of Physics.

引用

页码：2184 / 2186

页数：3

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