Study on off-state breakdown in AlGaN/GaN HEMTs

被引：19

作者：

Nakao, T ^{[1
]}

Ohno, Y ^{[1
]}

Kishimoto, S ^{[1
]}

Maezawa, K ^{[1
]}

Mizutani, T ^{[1
]}

机构：

[1] Nagoya Univ, Dept Quantum Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS | 2003年 / 0卷 / 07期

关键词：

D O I：

10.1002/pssc.200303405

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have studied the mechanism of off-state breakdown in AlGaN/GaN high electron mobility transistors (HEMTs). The off-state breakdown voltage (BVoff) had a positive temperature coefficient of 0.12 V/K. BVoff was represented by a monotonous decreasing function of gate leakage current (I-leak), which was analytically derived from the impact ionization coefficient. Our results suggest that off-state breakdown in AlGaN/GaN HEMTs originated from impact ionization in the channel, which was caused by the gate leakage current. BVoff increased with decreasing I-leak by a plasma surface treatment before gate metal deposition. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2335 / 2338

页数：4

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