Temperature dependence of the breakdown voltage for reverse-biased GaN p-n-n+ diodes

被引：8

作者：

Aggarwal, RL ^{[1
]}

Melngailis, I ^{[1
]}

Verghese, S ^{[1
]}

Molnar, RJ ^{[1
]}

Geis, MW ^{[1
]}

Mahoney, LJ ^{[1
]}

机构：

[1] MIT, Lincoln Lab, Lexington, MA 02490 USA

来源：

SOLID STATE COMMUNICATIONS | 2001年 / 117卷 / 09期

关键词：

semiconductors; epitaxy; phonons;

D O I：

10.1016/S0038-1098(00)00513-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The temperature dependence of the breakdown voltage V-B, due to impact ionization at high electric fields, for reverse-biased GaN p-n-n(+) diodes has been measured at temperatures T between 98 and 248 K. The observed increase of V-B with T is in excellent agreement with a simple model for the scattering of carriers by phonons with an effective energy of 42 meV. The impact ionization coefficients for the electrons and holes are nearly equal, and their geometric mean has the value 4 x 10(4) cm(-1) at the breakdown electric fields, in good agreement with recent theoretical results for 300 K. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：549 / 553

页数：5

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