GaN avalanche photodiodes

被引：174

作者：

Carrano, JC ^{[1
]}

Lambert, DJH

Eiting, CJ

Collins, CJ

Li, T

Wang, S

Yang, B

Beck, AL

Dupuis, RD

Campbell, JC

机构：

[1] US Mil Acad, Dept Elect Engn & Comp Sci, Photon Res Ctr, W Point, NY 10996 USA

[2] Univ Texas, Dept Elect & Comp Engn, Ctr Microelect Res, Austin, TX 78712 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 07期

关键词：

D O I：

10.1063/1.125631

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the electrical and optical characteristics of avalanche photodiodes fabricated in GaN grown by metalorganic chemical vapor deposition. The current-voltage characteristics indicate a multiplication of > 25. Experiment indicates and simulation verifies that the magnitude of the electric field at the onset of avalanche gain is greater than or equal to 3 MV/cm. Small-area devices exhibit stable gain with no evidence of microplasmas. (C) 2000 American Institute of Physics. [S0003-6951(00)01207-9].

引用

页码：924 / 926

页数：3

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