An optical programming/electrical erasing memory device: Organic thin film transistors incorporating core/shell CdSe@ZnSe quantum dots and poly(3-hexylthiophene)

被引：51

作者：

Chiu, Mao-Yuan ^{[1
]}

Chen, Chen-Chia ^{[1
]}

Sheu, Jeng-Tzong ^{[2
]}

Wei, Kung-Hwa ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30050, Taiwan

[2] Natl Chiao Tung Univ, Inst Nanotechnol, Hsinchu 30050, Taiwan

来源：

ORGANIC ELECTRONICS | 2009年 / 10卷 / 05期

关键词：

Organic thin film transistor; Memory; Conjugated polymers; Quantum dot; Core/shell; POLYMER; NANOCRYSTALS;

D O I：

10.1016/j.orgel.2009.03.011

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An optical programming/electrical erasing memory device was fabricated by adopting organic thin film transistors incorporating core/shell CdSe@ZnSe quantum dots (QDs) and poly(3-hexylthiophene) (P3HT) as active layers. After illumination, the presence of quantum well-structured core/shell CdSe@ZnSe QDs within the P3HT film enhanced the maximum ON/OFF ratio substantially to 2700; this value was maintained for 8000 s without noticeable decay. The ON state current could be erased effectively when using a single pulse of the gate voltage (- 10 V). This fabrication approach opens up the possibility of improving the memory performance of polymeric materials prepared at low cost using simple processes, (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：769 / 774

页数：6