Charge carrier transport in red electrophosphorescent emitting layer

被引:16
作者
Matsusue, Noriyuki [1 ]
Suzuki, Yuichiro [1 ]
Naito, Hiroyoshi [1 ]
机构
[1] Osaka Prefecture Univ, Dept Phys & Elect, Naka Ku, Sakai, Osaka 5998531, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 07期
关键词
iridium complexes; charge carrier transport; phosphorescence; OLEDs;
D O I
10.1143/JJAP.45.5966
中图分类号
O59 [应用物理学];
学科分类号
摘要
The concentration dependence of bis(2-(2 '-benzo[4,5-a]thienyl)pyridinato-NC(3'))iridium (acetylacetonate) [btP(2)Ir(acac)] in [btP(2)Ir(acac):4,4 '-N,N'-dicarbazole-biphenyl] (CBP) thin films has been studied by time-of-flight transient photocurrent measurements. It is found that electron drift mobility is dramatically decreased at low btp(2)Ir(acac) concentrations (< 1.5%) and is increased with the further addition of btp(2)Ir(acac) in btp(2)Ir(acac)-doped CBP thin films. The increase in electron drift mobility is due to electron hopping between btp(2)Ir(acac) molecules. In contrast, the hole transit signals of btp(2)Ir(acac)-doped CBP thin films were not observed.
引用
收藏
页码:5966 / 5969
页数:4
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