Wave-function mixing in strongly confined tunnel-coupled quantum point contacts

被引:2
作者
Apetrii, G.
Fischer, S. F. [1 ]
Kunze, U.
Schuh, D.
Abstreiter, G.
机构
[1] Ruhr Univ Bochum, Lehrstuhl Werkstoffe & Nanoelekt, D-44780 Bochum, Germany
[2] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
[3] Univ Regensburg, Inst Angew & Expt Phys, D-93040 Regensburg, Germany
关键词
double-quantum-well heterostructure; quantum point contact; 1D transport; 1D-1D coupling;
D O I
10.1016/j.physe.2006.03.026
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We investigate coupling phenomena in quantum point contacts (QPCs) where a particularly strong lateral confinement leads to large separations of the one-dimensional (I D) subbands (above 10 meV). Closely spaced vertically stacked QPCs were defined by atomic-force-microscope nanolithography and wet-chemical etching on a GaAs/AlGaAs double-quantum-well heterostructure with a two-dimensional symmetric-antisymmetric energy gap of 4 meV. Top-gate and back-gate voltage variation in combination with a cooling bias technique was used for tuning the energy spectra of the tunnel-coupled QPCs in order to obtain degeneracies of ID subbands. We observed clear anticrossings caused by mixing of the ID wave-functions in grey-scale transconductance plots versus top-gate and back-gate voltage at 4.2 K. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:526 / 529
页数:4
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