Dynamics of surface-excitonic emission in ZnO nanowires

被引:91
作者
Wischmeier, L.
Voss, T.
Rueckmann, I.
Gutowski, J.
Mofor, A. C.
Bakin, A.
Waag, A.
机构
[1] Univ Bremen, Inst Solid State Phys, D-28334 Bremen, Germany
[2] Tech Univ Carolo Wilhelmina Braunschweig, Inst Semicond Technol, D-38106 Braunschweig, Germany
关键词
SEMICONDUCTOR NANOWIRES; NANORODS; GROWTH;
D O I
10.1103/PhysRevB.74.195333
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report on systematic investigations of the dynamics of the surface-excitonic (SX) near-band-edge photoluminescence of ZnO nanowires observed at approximate to 3.365 eV. The temporal evolution of the SX emission of vapor-phase grown ZnO nanowires with diameters of d=40-130 nm is studied as a function of spectral position, temperature, and excitation intensity. A phenomenological rate-equation model is developed and discussed which is able to describe the experimentally observed transients pointing to a biexponential decay. A detailed analysis shows that the dependence of the transients on the spectral position can be explained by the relaxation and decay of excitons that are separated into a strongly localized and another weakly localized fraction. With increasing temperature, the trapped excitons are activated into less localized SX centers at higher lying energies. The distinct SX emission saturation behavior with increasing excitation density observed in time-integrated as well as in time-resolved measurements is clearly related to the limited number of SX near-surface centers.
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页数:9
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