Dose effects of cathodoluminescence in SiO2 layers on Si

被引:25
作者
Goldberg, M [1 ]
Trukhin, A [1 ]
Fitting, HJ [1 ]
机构
[1] LATVIAN STATE UNIV,INST SOLID STATE PHYS,LV-1063 RIGA,LATVIA
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1996年 / 42卷 / 1-3期
关键词
cathodoluminescence; electron bombardment; silicon dioxide;
D O I
10.1016/S0921-5107(96)01724-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Cathodoluminescence (CL) of thermal SiO2 layers is performed in a digital scanning electron microscope (SEM) and wavelength dispersed registered by a CCD-camera. The CL-spectrum of SiO2 shows three characteristic bands at 650 nm (red), 460 Mn (blue) and 285 nm (UV) that all change their intensity during the time of electron bombardment. This different excitation dose behaviour of the luminescence bands was investigated in a wide range of current densities (10(-5)-10(-3) A cm(-2)) and temperatures (90-500 K). Some interpretation is made by a model of precursor transformation and quenching. The UV and blue luminescence is attributed to twofold-coordinated silicon in SiO2. Contrary to thermal SiO2 films TEOS-CVD SiO2 shows only the red band which is generally associated with non-bridging oxygen.
引用
收藏
页码:293 / 296
页数:4
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