STUDY OF SIO LAYERS ON SI USING CATHODOLUMINESCENCE SPECTRA

被引：61

作者：

MITCHELL, JP ^{[1
]}

DENURE, DG ^{[1
]}

机构：

[1] BELL TEL LABS, WHIPPANY, NJ 07981 USA

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 07期

关键词：

D O I：

10.1016/0038-1101(73)90179-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：825 / 839

页数：15

共 40 条

[1] HYDRIDES AND HYDROXYLS IN THIN SILICON DIOXIDE FILMS [J].

BECKMANN, KH ;

HARRICK, NJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (04) :614-&

[2] ELECTRONIC STRUCTURE OF DEFECT CENTERS IN SIO2 [J].

BENNETT, AJ ;

ROTH, LM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (06) :1251-&

[3]

BREKHOVS.SM, 1971, OPT SPECTROSC-USSR, V30, P60

[4] RADIATION EFFECTS IN FUSED SILICA AND ALPHA-AL2O3 [J].

COMPTON, WD ;

ARNOLD, GW .

DISCUSSIONS OF THE FARADAY SOCIETY, 1961, (31) :130-&

[5] PROCESS TECHNIQUES AND RADIATION EFFECTS IN METAL-INSULATOR SEMICONDUCTOR STRUCTURES [J].

DENNEHY, WJ ;

HOLMESSI.AG ;

ZAININGE.KH .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1967, NS14 (06) :276-&

[6] PHOTOEMISSION MEASUREMENTS OF VALENCE LEVELS OF AMORPHOUS SIO2 [J].

DISTEFANO, TH ;

EASTMAN, DE .

PHYSICAL REVIEW LETTERS, 1971, 27 (23) :1560-+

[7] LUMINESCENCE EFFECTS ASSOCIATED WITH THE PRODUCTION OF SILICON MONOXIDE AND WITH OXYGEN DEFICIT IN SILICA [J].

EWLES, J ;

YOUELL, RF .

TRANSACTIONS OF THE FARADAY SOCIETY, 1951, 47 (10) :1060-1064

[8] MECHANISM OF COLOR CENTER DESTRUCTION IN HYDROGEN IMPREGNATED RADIATION RESISTANT GLASSES [J].

FAILE, SP ;

ROY, DM .

MATERIALS RESEARCH BULLETIN, 1970, 5 (06) :385-&

[9]

FAILE SP, 1970, 8 IEEE PHOT SPEC C S

[10] A SIMPLE NON-DESTRUCTIVE METHOD OF MEASURING THICKNESS OF TRANSPARENT THIN FILMS BETWEEN 10 AND 600 NM [J].

FRANZ, I ;

LANGHEINRICH, W .

SOLID-STATE ELECTRONICS, 1968, 11 (01) :59-+

← 1 2 3 4 →