A SIMPLE NON-DESTRUCTIVE METHOD OF MEASURING THICKNESS OF TRANSPARENT THIN FILMS BETWEEN 10 AND 600 NM

被引：17

作者：

FRANZ, I

LANGHEINRICH, W

机构：

来源：

SOLID-STATE ELECTRONICS | 1968年 / 11卷 / 01期

关键词：

D O I：

10.1016/0038-1101(68)90138-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：59 / +

页数：1

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共 13 条

[1] OPTICAL CONSTANTS OF GERMANIUM - 3600-A TO 7000-A
ARCHER, RJ
[J]. PHYSICAL REVIEW, 1958, 110 (02): : 354 - 358
[2] COMPUTATIONAL METHOD FOR DETERMINING N AND K FOR THIN FILM FROM MEASURED REFLECTANCE TRANSMITTANCE AND FILM THICKNESS
BENNETT, JM
BOOTY, MJ
[J]. APPLIED OPTICS, 1966, 5 (01): : 41 - &
[3] BOGENSCHUTZ AF, 1962, Z ANGEW PHYS, V14, P469
[4] MEASUREMENT OF THICKNESS AND REFRACTIVE INDEX OF OXIDE FILMS ON SILICON
BOOKER, GR
BENJAMIN, CE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (12) : 1206 - 1212
[5] THICKNESS MEASUREMENT OF SILICON DIOXIDE LAYERS BY ULTRAVIOLET-VISIBLE INTERFERENCE METHOD
CORL, EA
WIMPFHEIMER, H
[J]. SOLID-STATE ELECTRONICS, 1964, 7 (10) : 755 - &
[6] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K
DASH, WC
NEWMAN, R
[J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155
[7] FRANZ I, 1964, TELEFUNKENZEITUNG, V37, P194
[8] MAYER H, 1950, PHYSIK DUNNER SCHICH, P116
[9] OPTICAL CONSTANTS OF SILICON IN THE REGION 1 TO 10 EV
PHILIPP, HR
TAFT, EA
[J]. PHYSICAL REVIEW, 1960, 120 (01): : 37 - 38
[10] REFRACTIVE INDEX OF SIO2 FILMS GROWN ON SILICON
PLISKIN, WA
ESCH, RP
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (06) : 2011 - &