On the fractal model of the porous layer formation

被引:6
作者
Aroutiounian, VM [1 ]
Ghulinyan, MZ [1 ]
机构
[1] Yerevan State Univ, Dept Phys Semicond, Yerevan 375049, Armenia
来源
MODERN PHYSICS LETTERS B | 2000年 / 14卷 / 02期
关键词
D O I
10.1142/S0217984900000070
中图分类号
O59 [应用物理学];
学科分类号
摘要
In the present paper, a fractal model of a porous layer formation is proposed. The consideration of the time-dependent pore growth process has allowed us to calculate such important parameters of porous matrix as the formed surface area, and surface and volume porosity values. We have theoretically shown that the formed surface area strongly depends on the difference between the pore size growth velocities parallel and perpendicular to the surface, i.e. the crystallographic orientation of the material surface. The volume and surface porosity values as well as the formed porous surface area are linear functions on the anodization current density. These results are in rather good agreement with other theoretical and experimental data.
引用
收藏
页码:39 / 46
页数:8
相关论文
共 19 条
  • [1] Electro- and photoluminescence in graded bandgap nanostructures at moderate double injection level
    Aroutiounian, VM
    Ghoolinian, MZ
    [J]. ENGINEERED NANOSTRUCTURAL FILMS AND MATERIALS, 1999, 3790 : 55 - 63
  • [2] AROUTIOUNIAN VM, 1999, MAT 2 NATL C DIL ARM, P20
  • [3] Use of porous silicon antireflection coating in multicrystalline silicon solar cell processing
    Bilyalov, RR
    Stalmans, L
    Schirone, L
    Lévy-Clément, C
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (10) : 2035 - 2040
  • [4] Canham Leigh., 1997, Properties of porous silicon
  • [5] VISIBLE-LIGHT EMISSION DUE TO QUANTUM SIZE EFFECTS IN HIGHLY POROUS CRYSTALLINE SILICON
    CULLIS, AG
    CANHAM, LT
    [J]. NATURE, 1991, 353 (6342) : 335 - 338
  • [6] FALKONER KJ, 1997, FRACTAL GEOMETRY MAT
  • [7] FRONHOFF S, 1995, THIN SOLID FILMS, V255, P59
  • [8] Atomic force microscopy study of self-affine fractal roughness of porous silicon surfaces
    Happo, N
    Fujiwara, M
    Iwamatsu, M
    Horii, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (07): : 3951 - 3953
  • [9] THE PHYSICS OF MACROPOROUS SILICON FORMATION
    LEHMANN, V
    [J]. THIN SOLID FILMS, 1995, 255 (1-2) : 1 - 4
  • [10] Energy transfer in dye impregnated porous silicon
    Letant, S
    Vial, JC
    [J]. JOURNAL OF APPLIED PHYSICS, 1997, 82 (01) : 397 - 401