Formation of CdxZn1-xS Films for Photovoltaic Buffer Layers by Atomic Layer Deposition

被引：6

作者：

Bakke, J. R. ^{[1
]}

Bent, S. F. ^{[1
]}

机构：

[1] Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA

来源：

ATOMIC LAYER DEPOSITION APPLICATIONS 5 | 2009年 / 25卷 / 04期

关键词：

SOLAR-CELLS; THIN-FILMS; ZINC;

D O I：

10.1149/1.3205038

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Cu(In, Ga)(S, Se)(2), or CIGS, solar cell technology is one of the most promising and well-studied thin film photovoltaic systems. However, one of the challenges for the adoption of CIGS is that the most common and successful n-type buffer layer is CdS which contains a known carcinogen, cadmium. To reduce the use of Cd in the buffer layer, we are developing ALD processes to make graded buffer layers from CdS to Zn(O,S). The characteristics of the CdxZn1-xS ALD alloy are detailed in this paper. By alternating pulses of dimethylcadmium and diethylzinc (using H2S as the counter reactant of both), a CdxZn1-xS alloy can be deposited. The stoichiometry of the cadmium present in the alloy films is consistently higher than would be expected based on the pulse sequences of the precursors. Further, the roughness of the films is greater for the alloy than for a pure ZnS film deposited with an equivalent number of cycles.

引用

页码：9 / 14

页数：6

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