Simplified energy-balance model for pragmatic multi-dimensional device simulation

被引：12

作者：

Chang, DH

Fossum, JG

机构：

[1] Dept. of Elec. and Comp. Engineering, University of Florida, Gainesville

来源：

SOLID-STATE ELECTRONICS | 1997年 / 41卷 / 11期

关键词：

D O I：

10.1016/S0038-1101(97)00142-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To pragmatically account for non-local carrier heating and hot-carrier effects such as velocity overshoot and impact ionization in multi-dimensional numerical device simulation, a new simplified energy-balance (SEE) model is developed and implemented in FLOODS[16] as a pragmatic option. In the SEE model, the energy-relaxation length is estimated from a pre-process drift-diffusion simulation using the carrier-velocity distribution predicted throughout the device domain, and is used without change in a subsequent simpler hydrodynamic (SHD) simulation. The new SEE model was verified by comparison of two-dimensional SHD and full HD DC simulations of a submicron MOSFET. The SHD simulations yield detailed distributions of carrier temperature, carrier velocity, and impact-ionization rate, which agree well with the full HD simulation results obtained with FLOODS. The most noteworthy feature of the new SEB/SHD model is its computational efficiency, which results from reduced Newton iteration counts caused by the enhanced linearity. Relative to full HD, SHD simulation times can be shorter by as much as an order of magnitude since larger voltage steps for DC sweeps and larger time steps for transient simulations can be used. The improved computational efficiency can enable pragmatic three-dimensional SHD device simulation as well, for which the SEE implementation would be straightforward as it is in FLOODS or any robust HD simulator. (C) 1997 Elsevier Science Ltd.

引用

页码：1795 / 1802

页数：8

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