AN IMPROVED ENERGY-TRANSPORT MODEL INCLUDING NONPARABOLICITY AND NONMAXWELLIAN DISTRIBUTION EFFECTS

被引：128

作者：

CHEN, DT

KAN, EC

RAVAIOLI, U

SHU, CW

DUTTON, RW

机构：

[1] UNIV ILLINOIS,BECKMAN INST,URBANA,IL 61801

[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 01期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/55.144940

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An improved energy transport model for device simulation is derived from the zeroth and second moments of the Boltzmann transport equation (BTE) and from the presumed functional form of the even part of the carrier distribution in momentum space. Energy-band nonparabolicity and non-Maxwellian distribution effects are included to first order. The model is amenable to an efficient self-consistent discretization taking advantage of the similarity between current and energy flow equations. Numerical results for ballistic diodes and MOSFET's are presented. Typical spurious velocity overshoot spikes, obtained in conventional hydrodynamic (HD) simulations of ballistic diodes, are virtually eliminated.

引用

页码：26 / 28

页数：3

共 10 条

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[Anonymous], [No title captured]

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CHEN D, UNPUB NUPAD 92

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