AN ASSESSMENT OF APPROXIMATE NONSTATIONARY CHARGE TRANSPORT MODELS USED FOR GAAS DEVICE MODELING

被引：52

作者：

SANDBORN, PA

RAO, A

BLAKEY, PA

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 07期

关键词：

D O I：

10.1109/16.30929

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1244 / 1253

页数：10

共 29 条

[1] HOT-ELECTRON FLOW IN AN INHOMOGENEOUS FIELD [J].

ARTAKI, M .

APPLIED PHYSICS LETTERS, 1988, 52 (02) :141-143

[2] ON THE USE OF THORNBER AUGMENTED DRIFT-DIFFUSION EQUATION FOR MODELING GAAS DEVICES [J].

BLAKEY, PA ;

BURDICK, SA ;

SANDBORN, PA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (11) :1991-1994

[3] TRANSPORT EQUATIONS FOR ELECTRONS IN 2- VALLEY SEMICONDUCTORS [J].

BLOTEKJAER, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (01) :38-+

[4]

BREWITTTAYLOR CR, 1979, NUMERICAL ANAL SEMIC, P191

[5] MODELING OF A SUBMICROMETER GATE FIELD-EFFECT TRANSISTOR INCLUDING EFFECTS OF NONSTATIONARY ELECTRON DYNAMICS [J].

CARNEZ, B ;

CAPPY, A ;

KASZYNSKI, A ;

CONSTANT, E ;

SALMER, G .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :784-790

[6] TWO-DIMENSIONAL NUMERICAL-SIMULATION OF ENERGY-TRANSPORT EFFECTS IN SI AND GAAS-MESFETS [J].

COOK, RK ;

FREY, J .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) :970-977

[7]

COOK RL, 1981, THESIS CORNELL U ITH

[8] A TEMPERATURE MODEL FOR THE GAAS-MESFET [J].

CURTICE, WR ;

YUN, YH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) :954-962

[9] DIRECT COMPARISON OF THE ELECTRON-TEMPERATURE MODEL WITH THE PARTICLE-MESH (MONTE-CARLO) MODEL FOR THE GAAS-MESFET [J].

CURTICE, WR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (12) :1942-1943

[10] MONTE-CARLO DETERMINATION OF ELECTRON TRANSPORT PROPERTIES IN GALLIUM ARSENIDE [J].

FAWCETT, W ;

BOARDMAN, AD ;

SWAIN, S .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (09) :1963-&

← 1 2 3 →