ON THE USE OF THORNBER AUGMENTED DRIFT-DIFFUSION EQUATION FOR MODELING GAAS DEVICES

被引：14

作者：

BLAKEY, PA

BURDICK, SA

SANDBORN, PA

机构：

[1] Microelectronics & Computer, Technology Corp, Austin, TX, USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 11期

关键词：

COMPUTER SIMULATION - ELECTRONS - MATHEMATICAL STATISTICS -- Monte Carlo Methods - SEMICONDUCTING GALLIUM ARSENIDE -- Applications;

D O I：

10.1109/16.7416

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A general methodology for assessing charge transport models is outlined, and a method for calculating K. K. Thornber's (1982) augmenting transport coefficients is described. A Monte Carlo simulation of electron transport in GaAs is then used to perform calculations that permit an assessment of the utility of Thornber's equation. These results demonstrate significant problems in using Thornber's equation to model submicrometer GaAs devices.

引用

收藏

页码：1991 / 1994

页数：4

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