AN IMPROVED TWO-DIMENSIONAL SIMULATION-MODEL (MEGA) FOR GAAS-MESFET APPLICABLE TO LSI DESIGN

被引：9

作者：

HIROSE, M ^{[1
]}

YOSHIDA, J ^{[1
]}

TOYODA, N ^{[1
]}

机构：

[1] TOSHIBA CORP,CTR RES & DEV,KAWASAKI 210,JAPAN

来源：

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1988年 / 7卷 / 02期

关键词：

D O I：

10.1109/43.3152

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：225 / 230

页数：6

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