FIELD-INDUCED ANISOTROPIC DISTRIBUTION-FUNCTIONS AND SEMICONDUCTOR TRANSPORT-EQUATIONS WITH TENSOR-FORM COEFFICIENTS

被引：8

作者：

CHEN, DT ^{[1
]}

KAN, EC ^{[1
]}

HESS, K ^{[1
]}

机构：

[1] UNIV ILLINOIS, BECKMAN INST ADV SCI & TECHNOL, URBANA, IL 61801 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 10期

关键词：

D O I：

10.1063/1.347032

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We propose a phenomenological method to extend isotropic nonequilibrium distribution functions in semiconductors into field-induced anisotropic forms. We show that the distribution functions which we derive for the Γ valley of GaAs compare favorably to more precise Monte Carlo simulations. A complete set of transport coefficients for the mancroscopic current continuity and energy flux equations is also derived. These transport coefficients should be helpful to study the range of applicability of various hydrodynamic models in ultrasmall devices.

引用

页码：5360 / 5362

页数：3