THE INFLUENCE OF THE THERMAL-EQUILIBRIUM APPROXIMATION ON THE ACCURACY OF CLASSICAL TWO-DIMENSIONAL NUMERICAL MODELING OF SILICON SUBMICROMETER MOS-TRANSISTORS

被引：97

作者：

MEINERZHAGEN, B

ENGL, WL

机构：

[1] Inst fuer Theoretische, Elektrotechnik, Aachen, West Ger, Inst fuer Theoretische Elektrotechnik, Aachen, West Ger

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 05期

关键词：

D O I：

10.1109/16.2514

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

24

引用

收藏

页码：689 / 697

页数：9

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